Growth and characterisation of InAsP single quantum dots in InP nano/micro-cavities for single photon source applications

Abstract

Single-photon sources or emitters are at the core of quantum information technologies, ranging from quantum communication to quantum cryptography and quantum computing. Among various types of single-photon emitters, epitaxially grown semiconductor quantum dots have been recognised as highly promising candidates due to their superior optical performance, including high brightness, purity, and indistinguishability. The integration of single quantum dots into optical cavities to enhance the spontaneous emission rate is crucial for achieving high-quality single-photon emitters. While top-down fabrication approaches have been widely explored, deterministic positioning of single quantum dots remains a significant challenge. In this thesis, we develop a hybrid approach that combines droplet epitaxy with selective area epitaxy to deterministically position single quantum dots in various optical cavities, enabling both optically pumped and electrically injected single-photon source applications.